Electrical properties of lateral npn junctions using molecular beam epitaxy grown Si-doped GaAs on patterned substrates

✍ Scribed by Takeshi Takamori; Takeshi Kamijoh

• Publisher: Elsevier Science
• Year: 1995
• Tongue: English
• Weight: 430 KB
• Volume: 150
• Category: Article
• ISSN: 0022-0248
• DOI: 10.1016/0022-0248(95)80239-9