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Growth of wurtzite-GaN on silicon (100) substrate by molecular beam epitaxy

✍ Scribed by S. Joblot; F. Semond; F. Natali; P. Vennéguès; M. Laügt; Y. Cordier; J. Massies

Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
254 KB
Volume
2
Category
Article
ISSN
1862-6351

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Growth of GaN on SiC(0001) by Molecular
Growth of GaN on SiC(0001) by Molecular Beam Epitaxy
✍ Lee, C.D. ;Sagar, Ashutosh ;Feenstra, R.M. ;Sarney, W.L. ;Salamanca-Riba, L. ;Hs 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 188 KB 👁 1 views

GaN films are grown by plasma-assisted molecular beam epitaxy on 6H-SiC(0001) substrates. Suitable substrate preparation and growth conditions are found which greatly improve the structural quality of the films. Threading dislocation densities of about 1 Â 10 9 cm --2 for edge dislocations and 1 Â 1