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Very high channel conductivity in low-defect AlN/GaN high electron mobility transistor structures

✍ Scribed by Dabiran, A. M.; Wowchak, A. M.; Osinsky, A.; Xie, J.; Hertog, B.; Cui, B.; Look, D. C.; Chow, P. P.

No coin nor oath required. For personal study only.

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