Ion implantation is of great importance in semiconductor device fabrication. Owing to the increasing interest of" the microelectronic industry in the implantation of ions in the megaelectronvolt energy range, high energy beams are required. Furthermore, for several applications the implanted dose is
β¦ LIBER β¦
Variable energy r.f. quadrupole for high-energy ion implantation
β Scribed by Junya Ito; Katsumi Tokiguchi; Kensuke Amemiya; Noriyuki Sakudo; Satoru Yamada; Yasuo Hirao; Noboru Tokuda
- Publisher
- Elsevier Science
- Year
- 1994
- Tongue
- English
- Weight
- 406 KB
- Volume
- 66
- Category
- Article
- ISSN
- 0257-8972
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