Dynamic computer simulation of high energy ion implantation

✍ Scribed by Wolfhard Möller

• Publisher: Elsevier Science
• Year: 1989
• Tongue: English
• Weight: 407 KB
• Volume: 2
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(89)90071-8

✦ Synopsis

For the simulation of high ener~', high fluence implantations, dynamic codes are necessary which take into account the mod!fication of the substance due to the presence of the implants" and due to collisional effects. In the present paper, we give a brief description of such a binapy collision simulation prograrn and demonstrate its applicability to 200 ke V and 1 MeV implantations of oxygen and nitrogen into silicon.

The high fluence dynamic implantation profiles are considerably broadened with respect to the static profiles. It is found that the broadening is" mainly related to the swelling and the altered slowing down in the implanted layer, whereas sputtering is only important for the surface erosion and thereby the net shift of the implantation profiles. 7"he contribution of the collisional transport of target atoms can be neglected.