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Simulation of high energy implantation profiles in crystalline silicon

✍ Scribed by L. Gong; S. Bogen; L. Frey; W. Jung; H. Ryssel

Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
224 KB
Volume
19
Category
Article
ISSN
0167-9317

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For the simulation of high ener~', high fluence implantations, dynamic codes are necessary which take into account the mod!fication of the substance due to the presence of the implants" and due to collisional effects. In the present paper, we give a brief description of such a binapy collision simul