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Steep doping profiles obtained by low-energy implantation of arsenic in silicon MBE layers

✍ Scribed by N. Djebbar; J. Gutierrez; H. Charki; A. Vapaille; G. Prudon; J.C. Dupuy


Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
389 KB
Volume
184
Category
Article
ISSN
0040-6090

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