Design study of high energy, high current, R.F. accelerators for ion implantation

✍ Scribed by R.W. Thomae; H. Deitinghoff; J. Häuser; H. Klein; P. Leipe; A. Schempp; T. Weis; J. Bannenberg; W. Urbanus; R. Wojke; P.W. van Amersfoort

• Publisher: Elsevier Science
• Year: 1989
• Tongue: English
• Weight: 392 KB
• Volume: 2
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(89)90102-5

✦ Synopsis

Ion implantation is of great importance in semiconductor device fabrication. Owing to the increasing interest of" the microelectronic industry in the implantation of ions in the megaelectronvolt energy range, high energy beams are required. Furthermore, for several applications the implanted dose is as high as some 101'~ ions cm-:, which implies that high currents are needed also.

For both requirements the r.f. linear accelerator (linac) is well suited. The presented design studies are based on new linac structures (e.g.r.f quadrupole, rnultiple-electrostatic-quadrupole array linear accelerator and spiral loaded cavity), which l'ulfil the specific demands" of various applications. The .systems discussed cover a current range from 1 to 150 rnA and an energy range from 0.3 to 6 MeVfor ion masses between 10 and 133.