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Photoresist outgassing and carbonization during high energy ion implantation

✍ Scribed by John P. O'Connor; Jayne T. Riley

Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
644 KB
Volume
2
Category
Article
ISSN
0921-5107

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πŸ“œ SIMILAR VOLUMES

High energy ion implantation into diamon
High energy ion implantation into diamond and cubic boron nitride
✍ Alexander M. Zaitsev πŸ“‚ Article πŸ“… 1992 πŸ› Elsevier Science 🌐 English βš– 970 KB

The influence of ion implantation on diamond and cubic boron nitride is discussed. It is shown that high energy ion implantation (0.5 MeV nucleon-~ and higher) is a promising ion beam method of modification causing new effects in the superstrong semiconductors: (1) formation of multilayer impurity-d