High energy ion implantation into diamond and cubic boron nitride

✍ Scribed by Alexander M. Zaitsev

• Publisher: Elsevier Science
• Year: 1992
• Tongue: English
• Weight: 970 KB
• Volume: 11
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(92)90211-q

✦ Synopsis

The influence of ion implantation on diamond and cubic boron nitride is discussed. It is shown that high energy ion implantation (0.5 MeV nucleon-~ and higher) is a promising ion beam method of modification causing new effects in the superstrong semiconductors: (1) formation of multilayer impurity-defect structures which allows one to make three-dimensional doped structures; (2) stimulation of impurity and defect diffusion along the tracks of the high energy ions (using this effect the doping of the superstrong semiconductors with low temperature (about 1000 °C) diffusion at depths of several microns is possible);(3) formation of high pressure (several gigapascals) local regions.