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Vacancies in CZ silicon crystals observed by low-temperature ultrasonic measurements

✍ Scribed by Hiroshi Yamada-Kaneta; Terutaka Goto; Yuichi Nemoto; Koji Sato; Masatoshi Hikin; Yasuhiro Saito; Shintaro Nakamura

Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
429 KB
Volume
401-402
Category
Article
ISSN
0921-4526

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## Abstract Solution‐based nickel induced crystallization of amorphous silicon (a‐Si) films was performed. The nickel solution was prepared by dissolving (CH~3~CO~2~)~2~Ni in deionized water and applied uniformly on a‐Si films by low‐cost ultrasonic spray pyrolysis method. Crystallization could be