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Vacancies in as-grown CZ silicon crystals observed by low-temperature ultrasonic measurements

โœ Scribed by Hiroshi Yamada-Kaneta; Terutaka Goto; Yuichi Nemoto; Koji Sato; Masatoshi Hikin; Yasuhiro Saito; Shintaro Nakamura


Publisher
Springer US
Year
2008
Tongue
English
Weight
343 KB
Volume
19
Category
Article
ISSN
0957-4522

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๐Ÿ“œ SIMILAR VOLUMES


Vacancy distribution measurements in CZ
โœ Yukio Takano; Masaru Sutoh; Ayumu Satoh ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 430 KB

Vacancy concentration distribution is estimated by measuring deep levels induced by N -vacancy complexes in the wafers 2 which are prepared from Si crystals grown by different pulling rate. It is found that the vacancy concentration is very low inside the OSF-ring and a little low in the ring region