Vacancy distribution measurements in CZ Si crystals grown by different pulling rate

✍ Scribed by Yukio Takano; Masaru Sutoh; Ayumu Satoh

• Publisher: Elsevier Science
• Year: 1999
• Tongue: English
• Weight: 430 KB
• Volume: 45
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(99)00117-3

✦ Synopsis

Vacancy concentration distribution is estimated by measuring deep levels induced by N -vacancy complexes in the wafers 2 which are prepared from Si crystals grown by different pulling rate. It is found that the vacancy concentration is very low inside the OSF-ring and a little low in the ring region. Two kinds of the vacancy density profiles are observed in the specimens without the OSF-ring which are prepared from Si crystals grown by fast (1.4 mm / mm) and slow (0.4 mm / mm) pulling rate: one is a gradual and the other is a abrupt zigzag profile. We interpret the gradual profile is caused by macroscopic density change of the octahedral void defects and the abrupt variation is accompanied with the growth striation.