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Measurement of boron and phosphorus concentration in silicon by low-temperature FTIR spectroscopy

✍ Scribed by M. Porrini; M.G. Pretto; R. Scala; A.V. Batunina; H.C. Alt; R. Wolf

Publisher
Springer
Year
2005
Tongue
English
Weight
477 KB
Volume
81
Category
Article
ISSN
1432-0630

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We have measured the capacitance of a silicon wafer contained between two bulk metallic electrodes. The capacitance has a prominent, feature which is frequency and magnetic field dependent at. a temperature of about 5K for a 0.2f~-cm nominal resistance sample, and which is seen to be replicated at h