Low temperature measurements of the dielectric constant and loss of boron doped silicon

✍ Scribed by R.D. Biggar; K.R. Lane; J.M. Parpia

• Publisher: Elsevier Science
• Year: 1994
• Tongue: English
• Weight: 142 KB
• Volume: 194-196
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/0921-4526(94)90869-9

✦ Synopsis

We have measured the capacitance of a silicon wafer contained between two bulk metallic electrodes. The capacitance has a prominent, feature which is frequency and magnetic field dependent at. a temperature of about 5K for a 0.2f~-cm nominal resistance sample, and which is seen to be replicated at higher temperature for a 100f~-cm sample.