Low temperature polycrystalline silicon film formation by metal induced crystallization with nickel salt derived by ultrasonic spray pyrolysis
✍ Scribed by Mingfei Yang; Xiao Wei Sun; Hong Yu Yu; Junshuai Li; Junhui Hu
- Publisher
- John Wiley and Sons
- Year
- 2011
- Tongue
- English
- Weight
- 148 KB
- Volume
- 46
- Category
- Article
- ISSN
- 0232-1300
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✦ Synopsis
Abstract
Solution‐based nickel induced crystallization of amorphous silicon (a‐Si) films was performed. The nickel solution was prepared by dissolving (CH~3~CO~2~)~2~Ni in deionized water and applied uniformly on a‐Si films by low‐cost ultrasonic spray pyrolysis method. Crystallization could be realized for a‐Si films coated with a 0.2 M nickel solution and annealed at 500 °C. The effect of substrate temperature during nickel solution deposition was analyzed. Micro‐Raman and x‐ray diffraction measurement show that a‐Si is fully crystallized at 550 °C for 7 h with a nickel concentration of 0.8 M. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)