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Unpassivated GaN/AlGaN/GaN power high electron mobility transistors with dispersion controlled by epitaxial layer design

✍ Scribed by L. Shen; R. Coffie; D. Buttari; S. Heikman; A. Chakraborty; A. Chini; S. Keller; S. P. Denbaars; U. K. Mishra

Book ID: 107453239
Publisher: Springer US
Year: 2004
Tongue: English
Weight: 252 KB
Volume: 33
Category: Article
ISSN: 0361-5235
DOI: 10.1007/s11664-004-0195-6

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