✦ LIBER ✦

Monolithic integrated enhancement/depletion-mode AlGaN/GaN high electron mobility transistors with cap layer engineering

✍ Scribed by Kong, Yuechan; Zhou, Jianjun; Kong, Cen; Dong, Xun; Zhang, Youtao; Lu, Haiyan; Chen, Tangsheng

Book ID: 120482098
Publisher: American Institute of Physics
Year: 2013
Tongue: English
Weight: 1019 KB
Volume: 102
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.4789868

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Non-Recessed-Gate Enhancement-Mode AlGaN

Non-Recessed-Gate Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors with High RF Performance

✍ Endoh, Akira; Yamashita, Yoshimi; Ikeda, Keiji; Higashiwaki, Masataka; Hikosaka, 📂 Article 📅 2004 🏛 Institute of Pure and Applied Physics 🌐 English ⚖ 188 KB

Improved properties of high-Al-compositi

Improved properties of high-Al-composition AlGaN/GaN high electron mobility transistor structures with thin GaN cap layers

✍ Li, Haoran; Keller, Stacia; DenBaars, Steven P.; Mishra, Umesh K. 📂 Article 📅 2014 🏛 Institute of Pure and Applied Physics 🌐 English ⚖ 845 KB

Enhancing threshold voltage of AlGaN/GaN

Enhancing threshold voltage of AlGaN/GaN high electron mobility transistors by nano rod structure: From depletion mode to enhancement mode

✍ Xuan, Rong; Kuo, Wei-Hong; Hu, Chih-Wei; Lin, Suh-Fang; Chen, Jenn-Fang 📂 Article 📅 2012 🏛 American Institute of Physics 🌐 English ⚖ 987 KB