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Improved properties of high-Al-composition AlGaN/GaN high electron mobility transistor structures with thin GaN cap layers

✍ Scribed by Li, Haoran; Keller, Stacia; DenBaars, Steven P.; Mishra, Umesh K.

Book ID: 126822882
Publisher: Institute of Pure and Applied Physics
Year: 2014
Tongue: English
Weight: 845 KB
Volume: 53
Category: Article
ISSN: 0021-4922
DOI: 10.7567/jjap.53.095504

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