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High-voltage RESURF AlGaN/GaN high electron mobility transistor with back electrode

โœ Scribed by Du, Jiangfeng; Zhao, Ziqi; Luo, Qian; Zhao, Ziyu


Book ID
126509747
Publisher
The Institution of Electrical Engineers
Year
2013
Tongue
English
Weight
373 KB
Volume
49
Category
Article
ISSN
0013-5194

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## Abstract AlGaN/GaN high electron mobility transistors (HEMTs) show great promise for the realization of sensors for biomolecular, pharmaceutical and medical purposes. The high sensitivity and the stability in biological solutions are great advantages of this approach. Therefore, we created a nov