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Double-Channel AlGaN/GaN High Electron Mobility Transistor With Back Barriers

โœ Scribed by Kamath, A.; Patil, T.; Adari, R.; Bhattacharya, I.; Ganguly, S.; Aldhaheri, R. W.; Hussain, M. A.; Saha, Dipankar


Book ID
120059559
Publisher
IEEE
Year
2012
Tongue
English
Weight
670 KB
Volume
33
Category
Article
ISSN
0741-3106

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## Abstract AlGaN/GaN high electron mobility transistors (HEMTs) show great promise for the realization of sensors for biomolecular, pharmaceutical and medical purposes. The high sensitivity and the stability in biological solutions are great advantages of this approach. Therefore, we created a nov