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Normally-Off AlGaN/GaN High Electron Mobility Transistors with Thin and High Al Composition Barrier Layers

✍ Scribed by Zhang, Kai; Mi, Minhan; Chen, Yonghe; Cao, Mengyi; Wang, Chong; Ma, Xiaohua; Zhang, Jincheng; Hao, Yue

No coin nor oath required. For personal study only.

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