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Impact of GaN cap thickness on optical, electrical, and device properties in AlGaN/GaN high electron mobility transistor structures

✍ Scribed by Waltereit, P.; MuÌller, S.; Bellmann, K.; Buchheim, C.; Goldhahn, R.; KoÌhler, K.; Kirste, L.; Baeumler, M.; Dammann, M.; Bronner, W.; Quay, R.; Ambacher, O.

Book ID: 120153418
Publisher: American Institute of Physics
Year: 2009
Tongue: English
Weight: 975 KB
Volume: 106
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.3184348

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