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Effects of initial GaN growth mode on the material and electrical properties of AlGaN/GaN high-electron-mobility transistors

✍ Scribed by Wong, Yuen-Yee; Chang, Edward Yi; Huang, Wei-Ching; Lin, Yueh-Chin; Tu, Yung-Yi; Chen, Kai-Wei; Yu, Hung-Wei

Book ID: 126161991
Publisher: Institute of Pure and Applied Physics
Year: 2014
Tongue: English
Weight: 536 KB
Volume: 7
Category: Article
ISSN: 1882-0778
DOI: 10.7567/APEX.7.095502

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