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Extensive analysis of the luminescence properties of AlGaN/GaN high electron mobility transistors

✍ Scribed by Meneghini, M.; Stocco, A.; Ronchi, N.; Rossi, F.; Salviati, G.; Meneghesso, G.; Zanoni, E.

Book ID: 118145444
Publisher: American Institute of Physics
Year: 2010
Tongue: English
Weight: 439 KB
Volume: 97
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.3479917

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