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Improved oxide passivation of AlGaN∕GaN high electron mobility transistors

✍ Scribed by Gila, B. P.; Hlad, M.; Onstine, A. H.; Frazier, R.; Thaler, G. T.; Herrero, A.; Lambers, E.; Abernathy, C. R.; Pearton, S. J.; Anderson, T.; Jang, S.; Ren, F.; Moser, N.; Fitch, R. C.; Freund, M.

Book ID: 127321740
Publisher: American Institute of Physics
Year: 2005
Tongue: English
Weight: 285 KB
Volume: 87
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.2105987

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