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Non-Recessed-Gate Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors with High RF Performance

✍ Scribed by Endoh, Akira; Yamashita, Yoshimi; Ikeda, Keiji; Higashiwaki, Masataka; Hikosaka, Kohki; Matsui, Toshiaki; Hiyamizu, Satoshi; Mimura, Takashi

Book ID: 126685168
Publisher: Institute of Pure and Applied Physics
Year: 2004
Tongue: English
Weight: 188 KB
Volume: 43
Category: Article
ISSN: 0021-4922
DOI: 10.1143/JJAP.43.2255

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