𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Trapping Effects in the Transient Response of AlGaN/GaN HEMT Devices

✍ Scribed by Jos Mara Tirado; Jos Luis Sanchez-Rojas; Jos Ignacio Izpura


Book ID
114618629
Publisher
IEEE
Year
2007
Tongue
English
Weight
534 KB
Volume
54
Category
Article
ISSN
0018-9383

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Post-annealing effects on trapping behav
✍ Kim, H. ;Lee, J. ;Lu, W. πŸ“‚ Article πŸ“… 2005 πŸ› John Wiley and Sons 🌐 English βš– 113 KB

## Abstract Trapping effects in AlGaN/GaN high‐electron mobility transistors (HEMTs) are investigated using dynamic current–voltage (__I__–__V__) measurements with different quiescent biases and pulse widths to examine post‐annealing effects after Schottky gate formation. The results show that trap