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Trapping effects and microwave power performance in AlGaN/GaN HEMTs

✍ Scribed by Binari, S.C.; Ikossi, K.; Roussos, J.A.; Kruppa, W.; Doewon Park; Dietrich, H.B.; Koleske, D.D.; Wickenden, A.E.; Henry, R.L.

Book ID
114538594
Publisher
IEEE
Year
2001
Tongue
English
Weight
117 KB
Volume
48
Category
Article
ISSN
0018-9383

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Post-annealing effects on trapping behav
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## Abstract Trapping effects in AlGaN/GaN high‐electron mobility transistors (HEMTs) are investigated using dynamic current–voltage (__I__–__V__) measurements with different quiescent biases and pulse widths to examine post‐annealing effects after Schottky gate formation. The results show that trap