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Transient characteristics of gan-based heterostructure field-effect transistors

✍ Scribed by Kohn, E.; Daumiller, I.; Kunze, M.; Neuburger, M.; Seyboth, M.; Jenkins, T.J.; Sewell, J.S.; Van Norstand, J.; Smorchkova, Y.; Mishra, U.K.

Book ID: 120091100
Publisher: IEEE
Year: 2003
Tongue: English
Weight: 688 KB
Volume: 51
Category: Article
ISSN: 0018-9480
DOI: 10.1109/TMTT.2002.807687

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