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Fabrication of AlInN/AlN/GaInN/GaN heterostructure field-effect transistors

✍ Scribed by Kazuya Ikeda; Yasuhiro Isobe; Hiromichi Ikki; Tatsuyuki Sakakibara; Motoaki Iwaya; Tetsuya Takeuchi; Satoshi Kamiyama; Isamu Akasaki; Hiroshi Amano

Book ID
112182336
Publisher
John Wiley and Sons
Year
2011
Tongue
English
Weight
436 KB
Volume
9
Category
Article
ISSN
1862-6351

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πŸ“œ SIMILAR VOLUMES

AlGaN/GaInN/GaN heterostructure field-ef
AlGaN/GaInN/GaN heterostructure field-effect transistor
✍ Ikki, Hiromichi ;Isobe, Yasuhiro ;Iida, Daisuke ;Iwaya, Motoaki ;Takeuchi, Tetsu πŸ“‚ Article πŸ“… 2011 πŸ› John Wiley and Sons 🌐 English βš– 428 KB

## Abstract We report on the electrical properties of AlGaN/GaInN heterostructures fabricated with various InN molar fractions from 0 to 0.60 in GaInN on a GaN template. The sheet carrier density of the AlGaN/GaInN heterostructure monotonically increased with increasing InN molar fraction in GaInN,

DC and RF Characteristics of AlN/GaN Dop
DC and RF Characteristics of AlN/GaN Doped Channel Heterostructure Field Effect Transistor
✍ Daumiller, I. ;Schmid, P. ;Kohn, E. ;Kirchner, C. ;Kamp, M. ;Ebeling, K. J. ;Pon πŸ“‚ Article πŸ“… 1999 πŸ› John Wiley and Sons 🌐 English βš– 113 KB

First small signal, large signal and rf power characteristics of experimental 3 mm gate length AlN/GaN devices are reported between RT and 200 C. A high drain breakdown of 42 V and the absence of dispersion effects indicate that this challenging heterostructure is indeed attractive for the developme