Demonstration of diamond field effect transistors by AlN/diamond heterostructure
✍ Scribed by Masataka Imura; Ryoma Hayakawa; Eiichiro Watanabe; Meiyong Liao; Yasuo Koide; Hiroshi Amano
- Book ID
- 112183173
- Publisher
- John Wiley and Sons
- Year
- 2011
- Tongue
- English
- Weight
- 378 KB
- Volume
- 5
- Category
- Article
- ISSN
- 1862-6254
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## Abstract On the basis of RF characteristics and measured small‐signal parameters, an equivalent circuit model was formulated and characterized for metal‐semiconductor field effect transistors based on H‐terminated polycrystalline diamond. Starting from on‐wafer measurements, a bias‐dependent tra
First small signal, large signal and rf power characteristics of experimental 3 mm gate length AlN/GaN devices are reported between RT and 200 C. A high drain breakdown of 42 V and the absence of dispersion effects indicate that this challenging heterostructure is indeed attractive for the developme