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Modeling of diamond field-effect transistors for RF IC development

✍ Scribed by B. Pasciuto; W. Ciccognani; E. Limiti; A. Serino; P. Calvani; A. Corsaro; G. Conte; M. C. Rossi

Publisher
John Wiley and Sons
Year
2009
Tongue
English
Weight
385 KB
Volume
51
Category
Article
ISSN
0895-2477

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✦ Synopsis

Abstract

On the basis of RF characteristics and measured small‐signal parameters, an equivalent circuit model was formulated and characterized for metal‐semiconductor field effect transistors based on H‐terminated polycrystalline diamond. Starting from on‐wafer measurements, a bias‐dependent transistor behavior representation was fully determined. Such an equivalent circuit model is the first important step to realize an RF IC based on diamond. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 2783–2786, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24734

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