𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Modeling of parabolic quantum well wire channels for modulation-doped field-effect transistors

✍ Scribed by S.K. Islam; F.C. Jain


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
328 KB
Volume
14
Category
Article
ISSN
0749-6036

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


Self-consistent modeling ofC–Vand electr
✍ J.E. Manzoli; M.A. Romero; O. Hipólito 📂 Article 📅 1999 🏛 Elsevier Science 🌐 English ⚖ 68 KB

A self-consistent solution of Schrödinger and Poisson equations is implemented in order to provide a model for the capacitance-voltage characteristics of strained modulationdoped field-effect transistors. The proposed Hamiltonian accounts for the strain caused by lattice mismatch, as well as the pos

Analytic modelling for current–voltage c
✍ Ching-Sung Lee; Wei-Chou Hsu 📂 Article 📅 2001 🏛 Elsevier Science 🌐 English ⚖ 265 KB

A two-dimensional analytic model is proposed for characterizing the InGaP/InGaAs/GaAs metal-insulator-semiconductor (MIS) like pseudomorphic doped-channel field-effect transistor (PDCFET). The velocity overshoot effects, associated with the low effective mass in the In 0.15 Ga 0.85 As channel, have

Analytical model for dc characteristics
✍ Rashmi; Angu Agrawal; S. Sen; S. Haldar; R. S. Gupta 📂 Article 📅 2000 🏛 John Wiley and Sons 🌐 English ⚖ 226 KB 👁 2 views

rower than the achieved ; 25% impedance bandwidth. According to the measurements, good dual linear polarization characteristics can be realized between the two resonance frequencies.

Current–voltage characteristics and fiel
✍ Anju Agrawal; Anisha Goswami; Sujata Sen; R. S. Gupta 📂 Article 📅 2000 🏛 John Wiley and Sons 🌐 English ⚖ 194 KB 👁 2 views

A two-dimensional analytical model for the current᎐¨oltage characteristics of a pseudomorphic AlGaAsrInGaAs modulationdoped field-effect transistor is de¨eloped using charge-control analysis for its microwa¨e circuit applications. The two-dimensional potential, field, electron concentration, and ¨el