A self-consistent solution of Schrödinger and Poisson equations is implemented in order to provide a model for the capacitance-voltage characteristics of strained modulationdoped field-effect transistors. The proposed Hamiltonian accounts for the strain caused by lattice mismatch, as well as the pos
Modeling of parabolic quantum well wire channels for modulation-doped field-effect transistors
✍ Scribed by S.K. Islam; F.C. Jain
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 328 KB
- Volume
- 14
- Category
- Article
- ISSN
- 0749-6036
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