✦ LIBER ✦
Self-consistent modeling ofC–Vand electronic properties of strained heterostructure modulation-doped field-effect transistors
✍ Scribed by J.E. Manzoli; M.A. Romero; O. Hipólito
- Publisher
- Elsevier Science
- Year
- 1999
- Tongue
- English
- Weight
- 68 KB
- Volume
- 25
- Category
- Article
- ISSN
- 0749-6036
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✦ Synopsis
A self-consistent solution of Schrödinger and Poisson equations is implemented in order to provide a model for the capacitance-voltage characteristics of strained modulationdoped field-effect transistors. The proposed Hamiltonian accounts for the strain caused by lattice mismatch, as well as the position dependent lattice constant and electron effective mass. The inclusion of these strain-related energy terms is shown to be paramount to achieve good agreement between theory and experimental data for the C-V characteristics of pseudomorphic MODFETs at the forward bias range.