✦ LIBER ✦

Transformation of electrically active defects as a result of annealing of silicon implanted with high-energy ions

✍ Scribed by I. V. Antonova; S. S. Shaĭmeev; S. A. Smagulova

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Electrically active defects in erbium-im

✍ V.V. Emtsev; V.V. Emtsev Jr.; V.V. Kozlovskii; A. Misiuk; G.A. Oganesyan; D.S. P 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 136 KB

Injection of point defects during anneal

✍ C. Tsamis; D. Skarlatos; V. Valamontes; D. Tsoukalas; G. BenAssayag; A. Claverie 📂 Article 📅 2005 🏛 Elsevier Science 🌐 English ⚖ 223 KB

Kinetics of scanned electron beam anneal

✍ Krimmel, E. F. ;Oppolzer, H. ;Runge, H. ;Wondrak, W. 📂 Article 📅 1981 🏛 John Wiley and Sons 🌐 English ⚖ 875 KB

Electrical effects of residual defects i

✍ R. Kögler; J. von Borany; D. Panknin; W. Skorupa 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 393 KB

Spatial distribution, build-up, and anne

✍ A. R. Chelyadinskii; V. S. Varichenko; A. M. Zaitsev 📂 Article 📅 1998 🏛 SP MAIK Nauka/Interperiodica 🌐 English ⚖ 75 KB

Synchrotron X-ray diffraction studies of

✍ W. Wierzchowski; K. Wieteska; J. Auleytner; W. Graeff; D. Żymierska 📂 Article 📅 2004 🏛 Elsevier Science 🌐 English ⚖ 386 KB