Defects evolution in silicon during annealing after low energy Si + implantation is simulated by atomistic method in this paper. Distribution of implanted dopants and defects is simulated by molecular dynamic method. The experimental results published by Stolk et al. (J Appl Phys 81 (9) (1991) 6031)
β¦ LIBER β¦
Injection of point defects during annealing of low energy As implanted silicon
β Scribed by C. Tsamis; D. Skarlatos; V. Valamontes; D. Tsoukalas; G. BenAssayag; A. Claverie; W. Lerch
- Publisher
- Elsevier Science
- Year
- 2005
- Tongue
- English
- Weight
- 223 KB
- Volume
- 124-125
- Category
- Article
- ISSN
- 0921-5107
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