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Interstitial injection during oxidation of very low energy nitrogen-implanted silicon

โœ Scribed by D. Skarlatos; C. Tsamis; M. Perego; M. Fanciulli; D. Tsoukalas

Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
318 KB
Volume
124-125
Category
Article
ISSN
0921-5107

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๐Ÿ“œ SIMILAR VOLUMES

Atomistic simulation of defects evolutio
Atomistic simulation of defects evolution in silicon during annealing after low energy self-ion implantation
โœ Min Yu; Ru Huang; Xing Zhang; Yangyuan Wang; Kunihiro Suzuki; Hideki Oka ๐Ÿ“‚ Article ๐Ÿ“… 2004 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 278 KB

Defects evolution in silicon during annealing after low energy Si + implantation is simulated by atomistic method in this paper. Distribution of implanted dopants and defects is simulated by molecular dynamic method. The experimental results published by Stolk et al. (J Appl Phys 81 (9) (1991) 6031)