✦ LIBER ✦

Analysis of kink concentration during low-temperature annealing of low-energy implanted boron

✍ Scribed by Yoshikazu Furuta; Ryangsu Kim; Jianxin Xia; Takenori Aoki; Tomoya Saito; Yoshinari Kamakura; Kenji Taniguchi

Publisher: John Wiley and Sons
Year: 2002
Tongue: English
Weight: 191 KB
Volume: 85
Category: Article
ISSN: 8756-663X
DOI: 10.1002/ecjb.1104

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✦ Synopsis

Abstract

Experiments on the kink concentration of boron were investigated using a low‐energy boron‐implanted Si. It was found that the kink concentration has a time dependence and the process of kink formation can be classified into three stages. It has been confirmed from this phenomenon that the kink concentration is determined by the balance between the dissolution of boron clusters and the diffusion of boron. © 2002 Wiley Periodicals, Inc. Electron Comm Jpn Pt 2, 85(5): 29–34, 2002; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/ecjb.1104

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