Room temperature annealing of low-temperature ion implanted sapphire
β Scribed by C.S. Schnohr; E. Wendler; W. Wesch
- Publisher
- Elsevier Science
- Year
- 2007
- Tongue
- English
- Weight
- 172 KB
- Volume
- 257
- Category
- Article
- ISSN
- 0168-583X
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
## Abstract Experiments on the kink concentration of boron were investigated using a lowβenergy boronβimplanted Si. It was found that the kink concentration has a time dependence and the process of kink formation can be classified into three stages. It has been confirmed from this phenomenon that t
The B lattice location in presence of a Si-self-interstitial (I Si ) supersaturation, controlled by energetic proton bombardment, has been studied by means of ion channelling and massive Monte Carlo simulations. B-doped layers of Si crystals with a B concentration of 1 Γ 10 20 B/cm 3 were grown by M