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High temperature annealing of Europium implanted AlN

✍ Scribed by K. Lorenz; S. Magalhães; E. Alves; M. Peres; T. Monteiro; A.J. Neves; M. Boćkowski


Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
756 KB
Volume
268
Category
Article
ISSN
0168-583X

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In this work we carry out characterization of GaN implanted with Tm ions by transmission electron microscopy. We have investigated samples implanted at room temperature with different energies (150-300 keV) and fluences (1 • 10 14 -4.9 • 10 15 Tm/cm 2 ). High temperature annealing was performed at 1