X-Ray topographic study of the influence
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Dr. I. S. Vassilev; Dr. Z. Furmanik; I. N. Petrov; P. A. Botev; Prof. Dr. J. Aul
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Article
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1982
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John Wiley and Sons
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English
⚖ 577 KB
## Abstract The influence of thermal annealing on the image contrast of the boundaries of ^49^BF~2~^+^‐implanted regions in Si is investigated by means of X‐ray topography. The contrast is used for studying the wafer bending and the stress types. It is shown that the final state of deformation is d