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X-Ray topographic study of the influence of thermal annealing on the bending of 49BF2+-implanted Si wafers

✍ Scribed by Dr. I. S. Vassilev; Dr. Z. Furmanik; I. N. Petrov; P. A. Botev; Prof. Dr. J. Auleytner

Publisher
John Wiley and Sons
Year
1982
Tongue
English
Weight
577 KB
Volume
17
Category
Article
ISSN
0232-1300

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✦ Synopsis

Abstract

The influence of thermal annealing on the image contrast of the boundaries of ^49^BF~2~^+^‐implanted regions in Si is investigated by means of X‐ray topography. The contrast is used for studying the wafer bending and the stress types. It is shown that the final state of deformation is determined by: (1) the expansion of the surface layer caused by the implantation, (2) the contraction of this layer caused by the annealing. Effect (1) or (2) dominates depending on the implantation dose and annealing conditions. The possibility of compensating both effects leading to complete elimination of the bending of the implanted wafers is established. The results are discussed on the basis of the correlation between the deformation state of the wafers and the percentage B atoms occupying substitutionally Si‐lattice sites.

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