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Isochronal annealing study of hydrogen interaction with implantation-induced point defects in p-type silicon

✍ Scribed by Yutaka Tokuda; Hisanori Sato

Publisher: Elsevier Science
Year: 2003
Tongue: English
Weight: 175 KB
Volume: 6
Category: Article
ISSN: 1369-8001
DOI: 10.1016/j.mssp.2003.05.006

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