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Electrically active defects in erbium-implanted silicon: Effects of annealing under high hydrostatic pressures and electron irradiation

✍ Scribed by V.V. Emtsev; V.V. Emtsev Jr.; V.V. Kozlovskii; A. Misiuk; G.A. Oganesyan; D.S. Poloskin; N.A. Sobolev; E.A. Tropp


Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
136 KB
Volume
159-160
Category
Article
ISSN
0921-5107

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