Time-resolved scanned electron beam anne
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E.F. Krimmel; A.G.K. Lutsch
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Article
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1984
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Elsevier Science
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English
β 368 KB
Polycrystalline silicon layers of grains with an average diameter of 100 nm and with a thickness of 500 nm grown on an amorphous SiO2 layer are implanted with a dose of 4 x 10 is cm-2 boron ions at an ion energy of 25 keV and subsequently annealed up to maxima of 950Β°C and/or 300 s with a scanned an