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Kinetics of scanned electron beam annealing of high-energy as ion implanted silicon

✍ Scribed by Krimmel, E. F. ;Oppolzer, H. ;Runge, H. ;Wondrak, W.


Publisher
John Wiley and Sons
Year
1981
Tongue
English
Weight
875 KB
Volume
66
Category
Article
ISSN
0031-8965

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Time-resolved scanned electron beam anne
✍ E.F. Krimmel; A.G.K. Lutsch πŸ“‚ Article πŸ“… 1984 πŸ› Elsevier Science 🌐 English βš– 368 KB

Polycrystalline silicon layers of grains with an average diameter of 100 nm and with a thickness of 500 nm grown on an amorphous SiO2 layer are implanted with a dose of 4 x 10 is cm-2 boron ions at an ion energy of 25 keV and subsequently annealed up to maxima of 950Β°C and/or 300 s with a scanned an