Time-resolved scanned electron beam annealing of ion-implanted polycrystalline silicon

✍ Scribed by E.F. Krimmel; A.G.K. Lutsch

• Publisher: Elsevier Science
• Year: 1984
• Tongue: English
• Weight: 368 KB
• Volume: 15
• Category: Article
• ISSN: 0026-2692
• DOI: 10.1016/s0026-2692(84)80005-1

✦ Synopsis

Polycrystalline silicon layers of grains with an average diameter of 100 nm and with a thickness of 500 nm grown on an amorphous SiO2 layer are implanted with a dose of 4 x 10 is cm-2 boron ions at an ion energy of 25 keV and subsequently annealed up to maxima of 950°C and/or 300 s with a scanned and line-focussed electron beam of a current density of 1.1 mA/cm 2 at an electron energy of 18 keV. Two annealing stages and two weak reverse ones are observed in contrast to a single annealing stage and a strong single reverse one obtained on phosphorus-or arsenic-implanted polycrystalline silicon layers. A simple model is presented in order to explain the experimental results. The impact of the results on device design for VLSI and solar cells is mentioned.