width of the energy distribution curve, ranging from about 50 to 15 eV FWHM, is found to depend on the applied voltage VA and the length-to-diameter ratio (+ of the channel, and to vary with output current. The results can be explained in terms of the normalized field strength near the output end of
โฆ LIBER โฆ
Pulsed-electron-beam annealing of ion implanted GaAs
โ Scribed by H.W. Alberts; H.L. Gaigher; E. Friedland
- Publisher
- Elsevier Science
- Year
- 1991
- Tongue
- English
- Weight
- 379 KB
- Volume
- 9
- Category
- Article
- ISSN
- 0921-5107
No coin nor oath required. For personal study only.
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Polycrystalline silicon layers of grains with an average diameter of 100 nm and with a thickness of 500 nm grown on an amorphous SiO2 layer are implanted with a dose of 4 x 10 is cm-2 boron ions at an ion energy of 25 keV and subsequently annealed up to maxima of 950ยฐC and/or 300 s with a scanned an