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Supersaturated Si-As alloy formation by ion implantation and pulsed electron beam annealing

โœ Scribed by A. Turos; O. Meyer; J. Geerk


Publisher
Springer
Year
1982
Tongue
English
Weight
339 KB
Volume
28
Category
Article
ISSN
1432-0630

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Ion implantation of 20 keV 12 C + ions into (1 0 0), p-type silicon with ion fluence of 8 โ€ข 10 16 at. cm ร€2 followed by an electron beam annealing under high vacuum conditions has been performed to investigate the formation of crystalline nano-scale SiC features on the silicon surface. Depending on