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Change of the electron effective mass in extremely heavily doped n-type Si obtained by ion implantation and laser annealing

โœ Scribed by M. Miyao; T. Motooka; N. Natsuaki; T. Tokuyama


Publisher
Elsevier Science
Year
1981
Tongue
English
Weight
313 KB
Volume
37
Category
Article
ISSN
0038-1098

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